Two Dimensional Numerical Simulation of Zinc Oxy-Nitride Thin Film Transistors

The proposed work has reported the numerical simulation of Zinc Oxynitride based thin film transistors. The aim of the proposed model is to estimate the density of states distribution of ZnON semiconductor. The parameters of the assumed density of states were optimized so that the TCAD simulated current- voltage characteristics match the experimental data reported in the literature within an error band of 10%. This identified an exponential distribution for the tail states of zinc oxynitride films with characteristic energy of 26 meV. The density of tail states at the conduction band edge was calculated to be 1.7 × 10
²⁰
cm
^-3
eV
^-1
.