Optimal Stage Determination of Sapphire Nitridation Process Completion under High-Energy Electron Beam Influence

In this work, using the RHEED technique, the optimal stage of sapphire nitridation completeness was determined taking into account the electron beam influence on a nitridation process. It was found that as a result of the sapphire surface nitridation at the optimum stage of completion the A1N crystalline phase about one monolayer is formed on the surface. The A1N buffer layer growth under conditions of optimal stage of nitridation process completion is characterized by a smooth surface morphology and better crystalline perfection compared to A1N growth without nitridation or with excessive sapphire nitridation.