Electrophysical Characteristics of Sub-THz Diode with Schottky Barrier

In the paper, the results of research of the electrophysical and frequency characteristics of semiconductor structure with a Schottky barrier based on n-GaAs are presented. Current-voltage characteristic and frequency characteristic at the range 115–257 GHz are given. The possibility of using such semiconductor structures as a detector of Sub-THz radiation is shown.