Annealing Kinetics of GaAs under Incongruent Evaporation Conditions

In this paper, we analyze the effect of the GaAs substrate orientations on the evaporation kinetics under nonequilibrium annealing conditions. GaAs substrates with the (III)A and (III)B orientations were considered. The dependence of evaporation kinetics on the substrate orientation appears at high annealing temperatures, when a liquid gallium layer can be formed on the substrate. The surface roughness, the presence and merging of gallium droplets were shown to affect the evaporation kinetics.