Thermal resistance characterization of GaN power HEMTs on Si, SOI, and poly-AlN substrates

In this work the thermal behavior of GaN HEMTs is studied with a three-fold contribution: (i) test structures are introduced and manufactured; (ii) subsequently, those are used to perform the thermal characterization of small and power HEMTs on Si, SOI, and poly-AlN (QST
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); (iii) finally, 3D thermal FEM simulations are performed and validated with the experimental results, and then used to explore the effects of substrate thinning.