Voltages on silicon microstrip detectors in high radiation fields

The voltage between the AC-coupled readout strips and the silicon strip implants on a silicon microstrip detector in a high radiation field was investigated. The ionizing radiation was supplied by infrared lasers of varying intensity, creating ionization patterns that mimic those created by a flux of minimum ionizing particles. At high laser intensities, a complete breakdown of the operational electric field within the detector was achieved and studied as a function of laser intensity and connected circuit components. It was discovered that for a single-sided silicon microstrip detector, with n-type bulk, n-type silicon implant strips, and a p-type backplane, the voltage difference between the readout strips and the silicon implants could be minimized by using a large resistor between the backplane and the bias supply, and a small capacitor between the backplane and ground.