Comparative Study of AlGaN/GaN, InAlN/GaN and AlGaAs/GaAs based High Electron Mobilty Transistors Using Silvaco for High-Frequency Applications

In this paper, a detailed performance comparative study is performed among AlGaN/GaN, InAlN/GaN and conventional AlGaAs/GaAs based high electron mobility transistor (HEMT) devices. The comparison analysis is executed using a non-linear two-dimensional T-CAD numerical device simulator. With the recent carrier transport advancements, our paper mainly focuses on superior electrical property and high electron velocity of Gallium Nitride (GaN) for HEMT device modeling. GaN-based HEMT devices exhibit maximum drain current as 2.8×10
⁻⁴
A, the threshold voltage of -1V, and unity current gain cut-off frequency of 75.4 GHz. The Silvaco T-CAD simulator greatly highlights the various HEMT device performance reports, targeting microwave frequency-based device applications.