High vacuum wafer level packaging for uncooled infrared sensor

High vacuum packaging is a key factor for MEMS based uncooled infrared sensors in order to enhance sensitivity and optimize device performances. In this paper a high vacuum, low cost and reliable wafer-level package (WLP) architecture for a MOS based infrared sensor is presented, based on a double wafer bonding process and a getter layer integration. Vacuum level of the WLP was electrically characterized with positive results, confirming vacuum level value lower than 10$\mu$ bar.