A Mobility Stress Response Model of FinFET: Silicon vs Germanium

FinFET, which could be applied to sub 22 nm technology nodes, is the novel 3D transistor device structure to effectively inhibit short channel effect for the continuous microminiaturization of transistor components. This study focuses on the comparison of silicon and germanium, as the channel material, to FinFET for calculating carrier distribution and carrier mobility on inversion layer as well as the stress response. A mobility stress response model (piezomobility model) which could rapidly and accurately predict carrier mobility changes under different stress conditions is also investigated.