Numerical simulation and modeling of static characteristics and electrical noise in submicron MOS transistors

This work presents the electrical performances of MOS transistors strongly submicronic in terms of the output/transfer characteristics, the threshold voltage, and the short channel effect which are analyzed by numerical simulations and semi-analytical calculations. The analytical modeling is carried out by generalizing an approach giving the surface potential along the channel strong inversion mode by taking into account the nonuniformity related to the short channel effects. Thus, this model is used to calculate the fluctuations of the carrier number and the electrical noise corresponding to strongly submicronic MOS transistors.