Relevance of fin dimensions and high-pressure anneals on hot-carrier degradation

In this work, we address two open issues of HotCarrier Degradation (HCD) on n-type FinFET devices. Firstly, the controversial impact of fin width is studied in terms of exact {V
_OV
,V
_D
} stress conditions and taking in account the impact of external parasitic series resistance and Self-Heating Effects (SHE). Secondly, the impact of Hydrogen/Deuterium High-Pressure Anneal (HPA) on both time-0 and reliability is evaluated.