Study of Lower Voltage Protection against Plasma Process Induced Damage by Quantitative Prediction Technique

A simple method for quantitative prediction of V
_th
shift due to plasma process induced charging damage considering protection device effect is proposed. Based on this prediction, the gate oxide of transistor may be stressed by high voltage during plasma process even with efficient protection device such as gated diode, and then enormous V
_th
shift can be occurred. In this paper, we propose a new protection device which works at extremely lower voltage with higher current.