Comparing Variation-tolerance and SEU/TID-Resilience of Three SRAM Cells in 28nm FD-SOI Technology: 6T, Quatro, and we-Quatro

In our earlier study, we presented a variation-tolerant and radiation-resilient SRAM cell, namely we-Quatro. In this work, we fabricate 4KB macros of 6T SRAM, Quatro, and we-Quatro in a 28nm FD-SOI. Their read and write stabilities are compared through actual silicon measurements. In addition, we perform low energy neutron, mostly thermal, and gamma irradiation tests to evaluate their SEU and TID-resilience. The results validate the efficacy of our we-Quatro.