Advanced Self-heating Model and Methodology for Layout Proximity Effect in FinFET Technology

Self-heating effect (SHE, ∆T
sh
) has become a significant concern for device performance, variability and reliability co-optimization due to more confined layout geometry and lower-thermal-conductivity materials adopted in advanced technology, which substantially impacts on the integrated circuit (IC)’s design schemes. In this work, a new heat-dissipation-path based SHE model is proposed to describe the heat spreading to layout proximity by interactive thermal resistance (R
th(i,j)
). Meanwhile, R
th
-matrix methodology is employed to account for SHE layout proximity effect by linear superposition algorithm. Therefore, ∆T
sh
profile can be more accurately reckoned with account for thermal interaction effect.