Membrane III-V/Si DFB laser with width modulated silicon waveguide for narrowing linewdth

We demonstrate a membrane laser using an InP-based active region combined with a 220-nm-thick Si waveguide, where the Si waveguide width at the middle of the cavity is wider. The laser with a 500-μm long cavity exhibits a 3.3-mA threshold current and ∼300-kHz Lorentzian linewidth.