Wide-wavelength range membrane laser array using selectively grown InGaAlAs MQWs on InP-on-insulator

We have successfully demonstrated selective-area epitaxial growth of InGaAlAs MQWs on thin InP layer on SiO
2
/Si substrate for developing an eight-channel membrane laser array with a lasing wavelength of 1272.3–1310.5 nm. By optimizing the photoluminescence peak for each laser, 25.8-Gbit/s direct modulations are demonstrated.