A 900A High Power Density and Low Inductive Full SiC Power Module for High Temperature Applications based on 900V SiC MOSFETs

This paper developed a 900A high temperature SiC half bridge power module with high power density and low parasitic inductance. Details on the die layout, high temperature packaging material, fabrication process are discussed. The parasitic inductance of the module can be reduced to 5.5nH by comprehensively considering the optimization of the DBC layout and power terminal. Comparison results showed that proposed module was only 72% and 55% of commercial power module rating same current in volume and weight. Tests were done on static and dynamic characteristics of the module verifying the low inductive design. Thermal performance was also evaluated by a 300V/300A power test under Tc=25°C.