Surface roughness effect on gate leakage and C-V characteristics of deep submicron MOSFETs

In this work, direct tunneling, series resistance, and surface roughness effects on the capacitance-voltage (C-V) characteristics of ultrathin gate dielectrics in deep submicron MOSFETs are studied in a unified manner. An equivalent circuit model taking all the above mentioned effects into account is proposed. Based on our understanding, it is for the first time that the surface roughness effect on the C-V characteristics has been explored in the electrical engineering perspective.