Improving the accuracy of "Shift and Ratio" channel length extraction method in deep submicron technology

An improvement over the existing "Shift and Ratio" (S&R) algorithm for extracting effective channel length (L/sub eff/) in deep submicrometer MOSFETs has been developed. This electrical to physical correlation is needed in order to assess MOSFET reliability over the channel length spectrum. The limitations of S&R algorithm are discussed in the context of independent technologies. A correction factor is introduced and has been shown to improve the widely used S&R technique.