Vertical Gallium Oxide Transistors with Current Aperture Formed Using Nitrogen-Ion Implantation Process

Gallium oxide (Ga2O3) is an attractive material for next-generation power device applications due to its large breakdown electric field $(> \mathbf{7\ MV}/\mathbf{cm})$. This paper highlights current-aperture vertical Ga2O3 metal-oxide-semiconductor field-effect transistors fabricated using silicon- and nitrogen-ion implantation processes.