Compact Modeling of Surface Potential and Drain Current in Multi-layered MoS2 FETs

In this paper, we present a channel thickness dependent analytical model for MoS
2
symmetric double-gate FETs aiming at circuit simulation. To validate the model behavior, density functional theory (DFT) calculations are taken into account to obtain numerical data of N-layer (
$\mathbf{N}=\mathbf{1,2,3,4}$
, and 5) MoS
2
accounting for the
$K$
and
$\Lambda$
valley dependent effective masses and difference in energy levels. These extracted layer dependent material parameters are used as an input with layer independent mobility in DD simulator (coupled drift-diffusion and Poisson solver). The model shows excellent match for surface potential and drain current. The model prediction of digital figure of merits is also shown against the simulation data.