Gen-3 PRESiCE™ Technology for Manufacturing SiC Power Devices in a 6-inch Commercial Foundry

This paper describes a third-generation technology, named PRESiCE™, for manufacturing SiC power devices in a 6 inch commercial foundry. 1200 V JBS rectifiers and power MOSFETs have been fabricated using this process technology with excellent yield and parametric distributions. Three process qualification lots were run to demonstrate tight distributions in device parameters within each wafer, from wafer-to-wafer within a lot, and wafer-to-wafer from three lots. The performance of the JBS rectifiers, power MOSFETs, and JBSFETs manufactured using this process is competitive with commercially available products.