The Investigation of Material Modification for SiO2, Si3N4 Film and Photo-resist using High-Dose Ion Implantation Technique

We studied material modification of SiO2, Si3N4and photo-resist film by using high-dose ion implantation technique. The both wet and dry etching rate can be controlled by selecting the ion species and implantation dose. The wet etching rate of SiO2 film can be changed both increase and decrease direction. The dry etching rate against CF4plasma is increased by P⁺implantation for SiO2 film and by N⁺implantation for Si3N4film, respectively. For photo-resist film, N⁺implantation can improve the selectivity during plasma etching without degradation of removal characteristics. Those techniques can be quite useful for fabrication process of CMOS devices.