Electrothermal model of multilayer structure for the design of GaAs integrated circuit devices

In this paper a mathematical model for the solution of the non-linear 3-D heat equation for GaAs MESFETs is presented. The electrothermal feedback has been implemented by calculating the FET drain current at the actual channel temperature. The thermal solution has been achieved by the Kirchhoff transformation, which accounts for the temperature-dependent thermal conductivity, and the 2-D Fourier transform method.