Design and Investigation of Lateral HfO2/SiO2 Gate Stacked TFET on SELBOX Substrate for Low Power and High-Frequency Applications

In this work, we have designed a novel device which is working on the principle of band to band tunneling, called as lateral HfO
2
/SiO
2
gate stacked TFET on SELBOX substrate (LGS-STFET). The gap created near the source region to form a SEL-BOX structure is responsible for reducing the off-state current. DC and RF analysis have been investigated in this work for our proposed device along with conventional SEL-BOX TFET (C-STFET). From DC analysis, it is observed that sub-threshold swing (SS) of the proposed device is very low (22.5 mV/dec) compared to conventional SELBOX TFET (C-STFET). In the RF analysis, maximum transit frequency of the proposed device (LGS-STFET) is found to be 60 GHz as compared to conventional SELBOX TFET (2.26 GHz). The DC/RF parameters like transfer characteristics, transconductance, gate to drain capacitance, transit frequency, transit delay, and gain-bandwidth product (GBP) of the proposed TFET have been compared with C-STFET in this manuscript. All the DC and RF parameters analysis have done through simulation by using ATLAS TCAD tool.