An Integrated Silicon MOS Single-Electron Transistor Charge Sensor for Spin-Based Quantum Information Processing

Recent advances demonstrated the feasibility of realizing spin-based quantum computation in Silicon. To make further progress towards a large-scale implementation of spin-based quantum device technologies, a reliable fabrication process with good yield and device uniformity is a crucial requirement. We address this challenge by integrating a prototype spin qubit device in a 300 mm process, using state-of-the-art, CMOS-compatible process steps. We demonstrate well-formed single-electron transistors with a feature size of 50 nm, individual electron controllability and show multi-gate control uniformity from room-down to low-temperature. Dots with charging energies of 1–2 meV and sizes of around 46 nm are estimated, in excellent agreement with design geometry. The noise power spectrum reveals 1/f noise with an amplitude of
$2~\mu $
eV at 1 Hz. This successful integration enables further exploration of reproducible Silicon-based spin qubit devices and opens paths for systematic investigation of the performance and scalability of future spin-based qubit devices.