Deep Integration and Topological Cohabitation of Active Circuits and Antennas for Power Amplification and Radiation in Standard CMOS

In this article, a densely integrated and unified paralleled amplifier and antenna architecture is proposed and demonstrated for next-generation millimeter-wave (mmW) and terahertz (THz) front-end modules. It makes use of topologically paralleled transistors cohabitated within a compact rectangular patch antenna (CRPA) as a unified cell. This design simultaneously amplifies and radiates power without resorting to any power divider, input and output matching networks, or power combiner whatsoever, therefore, greatly reducing front-end loss, size, and complexity. Then, the unified unit cell is self-consistently distributed to form a unified planar array with active elements between array elements as power feeders. In this demonstration, the input power is sequentially amplified, radiated through each array element, and spatially added up, resulting in low on-board circuit losses and efficient radiation. In this article, we investigate and present challenges and early results of implementing this unification concept of active circuitry and antenna at mmW frequencies. Using a standard 65-nm CMOS process, a set of chips were designed, fabricated, and tested under different amplifier biasing conditions at 146 GHz for experimental demonstration. The realized low-loss, matched, and compact unified prototypes have demonstrated an amplified radiation, with power enhancement of 3.4 dB through single element and 6 dB through 2 × 2 layout compared to their respective passive counterparts. Moreover, frequency tuning is observed varying drain bias and self-matching is improved with increasing gate bias. Therefore, the feasibility of a unique feature in the architectural implementation of low-loss, compact, and densely integrated and topologically cohabitated mmW and THz front-end modules is confirmed.