Endurance of ferroelectric La-doped HfO2 for SFS gate-stack memory devices

This work presents an analysis of the endurance of ferroelectric capacitors fabricated with a thin lanthanum-doped hafnium oxide layer in an SFS type of structure. The thin film has been measured by GIXRD and the main crystallographic parameters have been related to the ferroelectric behavior of the samples. The effect of variation in the process conditions, particularly La doping concentration and post deposition anneal, have also been investigated. It has been found that the crystallographic composition of the FE layer plays a role in the endurance of material.