Impact of Source and Drain Underlap on Analog Performance of Double-Gate AlGaN/GaN MOS-HEMT

In this work, a comparative study of analog performance is undertaken for symmetric and asymmetric source/drain underlap Double Gate (DG) heterojunction based AlGaN/GaN Metal Oxide High Electron Mobility Transistors (DG MOS-HEMTs). The analog parameters considered for this analysis are Drain current (I
D
), Transconductance (g
m
) and Intrinsic Gain (g
m
R
O
). A 31.07% and 7.77% higher ON current is achieved for source underlap device when compared with symmetric and drain underlap devices respectively; and a incremented transconductance peak for source underlap device is also established with peak of 16.35% and 5.58% higher than compared to symmetric and drain underlap devices respectively, however the symmetric underlap device shows an Intrinsic gain peak of 60.44% and 58.38% higher than that of source and drain underlap devices respectively.