High-κ Dielectrics on 20nm FDSOI FinFET: Study on Analog and RF Performance

In this paper, a detailed comparative study of RF and analog performance of FinFET structure is reported for two different gate dielectric materials - SiO2 and HfO2. Initially, the comparison of transfer characteristics of FinFET for both SiO2 and HfO2 is shown. The various analog parameters like transconductance (gm), transconductance generation factor (TGF), output conductance (gd), and intrinsic gain (gm/gd) are also reported for both the gate dielectric materials. Likewise, a comparative analysis of various RF parameters such as gate capacitance (CGG), cut-off frequency (ft), transconductance frequency product (TFP), gain frequency product (GFP) and gain transconductance frequency product (GTFP) are reported between SiO2 and HfO2. It is visualized that HfO2-based gate dielectric device provides better analog performance, whereas, the device with SiO2 as gate dielectric shows improved RF parameters