A Comparative Analysis of Analog Performances of Underlapped Dual Gate AlGaN/GaN Based MOS-HEMT and Schottky-HEMT

This paper presents a comparative and analytical study on the basis of analog performances of an Underlapped Dual Gate (U-DG) AlGaN/GaN MOS-HEMT with gate oxide and an U-DG AlGaN/GaN Schottky-HEMT. The study has been conducted based on the effect on the conduction band energy profile and also on the basic Analog Figure of Merits (FoMs) like Drain current (I
d
), Transconductance (g
m
), Output Resistance (r
o
), Intrinsic Gain (g
m
r
o
). It has been observed that though Schottky-HEMTs have higher transconductance and faster switching transients, MOS-HEMTs are advantageous over the former as the latter experiences higher drive current capacity, lower threshold voltage, better I
on
/I
off
ratio and greater peak intrinsic gain.