Controllable Functional Layer and Temperature-Dependent Characteristic in Niobium Oxide Insulator–Metal Transition Selector

The niobium oxide insulator-metal transition selector device is considered to be a rectifying device with great potential. However, the lack of research on the experimental parameters and the complex physical mechanism of the NbO2 device seriously affected its development. In this article, a controllable intermediate functional layer of NbO
_x
was reported in the Pt/NbO
_x
/TiN device subjected to different forming compliance currents (FCCs) and compliance currents (CCs). The different FCCs and CCs changed the size of the Nb
₂
O
₅
and NbO
₂
layers within the NbO
_x
layer, which further affected the threshold voltage. The result helped to realize the control of the NbO
_x
functional layer, which was also of great significance for the adjustment of the experimental parameters in the preparation experiment according to the required performance. Furthermore, the I-V characteristics and switching times at different ambient temperatures were carried out, showing the specific dependency of the device on temperature. Between them, the simulated switching time of 2 ns at room temperature proved that the selector had a great application prospect in high speed and high-density storage or logic switch. Generally, the whole research helped to improve the control of the interlayer structure and the performance of the device for application in 3-D crossbar arrays, and provided a valid model to study the device.