Numerical investigation of nano heat transfer process in FET nano devices using Ballistic-diffusive model

The main idea in this work, is to evaluate the advantage of Graphene transistors. In addition, we investigate the thermal stability of nano devices. In the first step, we study the ability of our proposed model to predict the thermal conduction in nano MOSFET devices. On the other hand, we studied the nano-heat conduction process in Graphene transistors. The ballistic-diffusive equation (BDE), was numerically solved to assess the heat transport in the nano transistors. The proposed model is used to report the thermal conductivity through the nature of scattering mechanism. It is found that our predictive model is able to describe phonons scattering in MOS structures. Furthermore, the Graphene MOSFET is more thermally stable than the Si MOSFET devices.