Electromagnetic switching cell design and characterization for WBG power semiconductors

This paper presents several approaches to simplify the design and characterization of fast switching power modules. Limits of acceptable parasitic parameters for power module design are obtained by circuit simulation respective to the semiconductor model having properties defined in this paper. Furthermore, this paper gives an overview of the parasitic inductances and capacitances of switching cells and weights their importance for power module with half-bridge topology. By means of this analysis shoot-through while turn-on can be eliminated and unwanted voltage overshoot and oscillations at turn-off can be minimized to required limits. A non-invasive method for the determination of the DC link inductance and its partial stray inductances is shown using standard impedance measurements.