Double pulse vs. indirect measurement: Characterizing switching losses of integrated power modules with wide bandgap semiconductors

To optimize power electronic systems, the characterization of switching losses is very important. When using wide bandgap (WBG) semiconductors, this becomes more difficult with the standard measurement method due to high switching speeds. This paper discusses feasible measurement methods to determine switching losses of integrated power modules with fast switching semiconductors with high accuracy. The limits of the classical double pulse method are identified and where errors occur are analyzed. Furthermore, indirect switching loss measurement methods are described which have no disturbing effect on the switching cell. A circuit model is presented allowing to calculate switching losses from datasheet parameters.