Influence of Stray Capacitance on Dynamic Test Results of Power Semiconductor devices

Stray capacitance in semiconductor device dynamic test platform affects the switching waveform, especially in the testing of SiC semiconductor devices, which has a faster switching than silicon semiconductor devices. During turn-on and turn-off process, the collector-emitter voltage changes rapidly, and stray capacitance shunts a portion of the total current, which causes the measurement of a distorted result. In order to investigate the effect of stray capacitance and voltage change on current measurement results, an equivalent circuit model considering parasitic capacitance is built. Theoretical analysis shows that stray capacitance causes undesirable current distortion during switching transient. Experimental results verified the correctness of theoretical analysis.