Determination of Bi12SiO20 permittivity and loss tangent in the 220–325 GHz band and the influence of UV exposure on these parameters

Bismuth silicon oxide (Bi12SiO20, BSO) is a material having wide range of applications in optical technology, electronics, and microwave techniques. An application in sub-THz devices is also prospective. In view of the foregoing, the electrical parameters of a single-crystal BSO were examined in this work in the 220-325 GHz frequency range. The influence of UV radiation on the transmission of waves through the material was also subjected to an experimental study. The results can contribute to the development of future BSO based sub-THz devices.