A 320 GHz Octagonal Shorted Annular Ring On-Chip Antenna Array

In this paper, an octagonal shorted annular ring (OSAR) antenna array is presented based on 130-nm SiGe BiCMOS technology without any post-processes. The OSAR antenna consists of annular ring patch, an array of shorted pins and ground which is formed a cavity to enhance the gain and reduce surface waves. The 1 x 2 OSAR antenna array is designed and fabricated with the die area of 550 x 1100μm
²
. The measured -10-dB impedance bandwidth is more than 17 GHz (303-320 GHz). The proposed on-chip antenna array is achieved a measurement perk gain of 4.1 dBi at 320 GHz and the simulated radiation efficiency of 38 %.