Reliable and forming free bipolar resistive switching in solution derived Ag/BiFe0.99Cr0.01O3/FTO device

BiFe
_0.99
Cr
_0.01
O
₃
thin film is deposited on FTO glass using sol-gel technique. The deposited film is used in Ag/ BiFe
_0.99
Cr
_0.01
O
₃
/FTO configuration to understand its potential as RRAM device. The device showed forming free bipolar RRAM characteristics with Ion/Ioff~80. The device showed non-volatile behaviour by maintaining its LRS and HRS states for 10
⁴
s. The device exhibits excellent reproducibility up to 100 cycles and reliability of V
_set
and V
_reset
voltage is observed. The endurance characteristics for 200 cycles ensures the stability of the device, further, conduction mechanism is attributed to filament formation and switching mechanism is assigned to migration of silver ion inside the film.