Heterogeneous Photodiodes on Silicon Nitride Waveguides with 20 GHz Bandwidth

We demonstrate InGaAs/InP modified uni-traveling carrier photodiodes on Si
₃
N
₄
waveguides with 20 GHz bandwidth and record-high external (internal) responsivities of 0.8 A/W (0.94 A/W) and 0.33 A/W (0.83 A/W) at 1550 nm and 1064 nm, respectively. Balanced photodiodes have 10 GHz bandwidth.