High-Speed and 16 λ-WDM Operation of Ge/Si Electro-Absorption Modulator for C-Band Spectral Regime

We present high-speed of 100Gbps for PAM-4 signal and 16λ-WDM operations of a Ge/Si EAM in C-band. Operation wavelengths could be controlled by Ge/Si stack width, and 16 λ operation was demonstrated at 50 Gbps.