120 Gb s−1 Hybrid Silicon and Lithium Niobate Modulators with On-Chip Termination Resistor

We demonstrated hybrid silicon and lithium niobate Mach-Zehnder modulators with on-chip termination resistor. The device shows high electro-optic bandwidth up to 60 GHz, low V
_π
of 2.25 V and low insertion loss of 2 dB.