Field-Plated Lateral Ga2O3 MOSFETs With Polymer Passivation and 8.03 kV Breakdown Voltage

This letter reports the polymer passivation of field plated lateral β-Ga
₂
O
₃
MOSFETs with significant improvement in the breakdown voltages as compared to non-passivated devices. We show consistent results of higher breakdown voltages in passivated devices as compared to non-passivated devices for MOSFETs with Lgd ranging from 30μm to 70μm and across two process runs. We obtain a record high breakdown voltage of 6.72 kV for a MOSFET with L
_gd
= 40μm giving an average field strength of 1.69 MVcm
^-1
. The peak drain current is ~ 3 mA/mm for L
_g
= 2μm device with a gate source separation of 3μm. The on-resistance for the device is, R
_on
= 13 kΩ.mm, giving a power device Figure of Merit of 7.73 kWcm
^-2
. The R
_on
is high due to plasma induced damage of channel and access regions. The R
_on
and on-current density remain unchanged after passivation. The breakdown increases with L
_gd
up to 70μm, giving a maximum breakdown voltage of 8.03 kV.