Piezotronics Engineering of Heterojunction solar cell for energy harvesting

In this paper the potential of piezotronic hetrojunction n-ZnO/n+MoS
₂
/n-MoS
₂
/p-Si/p+Si solar cell has been designed, assessed and discussed. The piezotronics effect of piezoelectric polarization charges have been used to tune the barrier height adequately to improve the efficiency of heterojunction solar cell. This bandgap tuning has been done to have an effective electron-hole pairs generation, and separation of charge carriers at n-MoS
₂
/p-Si junction even at low illumination condition. The n+MoS
₂
layer introduces a build-in electric field in the interface level, which promotes the separation of photo generated carriers from n-MoS
₂
to p-Si depletion region. Mos2 active emitter layer has modulation of charge in an electric field by photons controlled switching of the memristor properties. It is observed that the open circuit Voltage (Voc) and Short circuit current (Isc) of the proposed solar cell as 0.405[V], 0.9[uA] respectively. The developed solar cell model can be a suitable candidate for environmentally and self-powered technology.