Heterogeneous Integration of GaN SPDT with Si CMOS

This paper presents a new heterogeneous integration of GaN HEMT with Si CMOS, the excellent RF performance of GaN SPDT with the low power consumption and integration advantages of Si CMOS is realized through face to face microbump bonding. Small signal results demonstrate that the integrated SPDT exhibits an insertion loss less than 1.1 dB and isolation better than 30 dB at the whole X-Band. Output power measurements at 10 GHz show a 0.3 dB compression power (P-0.3) greater than 46 dBm. The measured results indicate that the integrated SPDT reduces the total chip area by 30% when compared to separate devices without sacrificing any RF performance. This work should be instructive for compound semiconductor RF devices with Si CMOS to be optimally combined and further meet the development of future communication, radar and other systems.