Pulsed Operation and Low-energy Consumption Characteristic on HfON RRAM Devices as Electronic Synapse

In this work, HfON-based resistive random-access memory (RRAM) device was fabricated to investigate the low-energy consumption characteristic for electronic synapse application. A new pulse operation scheme was proposed to tune the resistance states of RRAM by applying variable pulse voltage amplitude and pulse width. The resistance change range can be larger than 1000. The effect of growth conditions with different nitrogen/oxygen ratio on switching energy consumption is also studied. It indicates that higher nitrogen/oxygen ratio in HfON layer is beneficial to the reduction of pulse switching energy consumption.