Analytical Method Based On A Trapezoidal Shape For Edgeless Gate Enclosed (EGE) MOSFET Width Over Length Calculation

This work presents an analytical solution to calculate the aspect ratio (width over length) of an edgeless gate enclosed (EGE) MOSFET. The solution involves the use of trapezoid geometries which are used to obtain an approximated equivalent size for an asymmetrical transistor. A comparison between the proposed solution and other analytical and experimental methods is presented. Extracted sizes show an accuracy with a variance of 5% and a max error of current prediction of 8% without equilibrium threshold voltage modification and 5% with the modification.