Abstract:
Bootstrap capacitor in FET gate driver plays an important role for measuring transient performance of half bridge configuration especially in the top switch. In this pape...Show MoreMetadata
Abstract:
Bootstrap capacitor in FET gate driver plays an important role for measuring transient performance of half bridge configuration especially in the top switch. In this paper bootstrap capacitor design for GaN-FET driver is discussed. Based on the design a new gate driver for GaN-FET is proposed for improving dv/dt immunity. The performance of the proposed GaN driver is compared with existing LM5113 (Texas Instrument) based driver and IR2110 based MOSFET driver. The modelling is carried out in Spice based Multisim 14.1 simulation environment. The bootstrap capacitor-based GaN driver is tested on 60W synchronous buck DC-DC converter.
Published in: 2020 IEEE International Conference on Power Electronics, Smart Grid and Renewable Energy (PESGRE2020)
Date of Conference: 02-04 January 2020
Date Added to IEEE Xplore: 20 April 2020
ISBN Information:
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