Design and Characterization of a Smart Temperature Sensor

This paper presents the design and characterization of a smart temperature sensor based on vertical PNP BJT transistors as sense elements. The sensor modulates the temperature through the Duty Cycle of a square wave output signal. In order to validate the design, the sensor was fabricated in the TSMC 180nm CMOS process. The simulation results show a power consumption around 586μW and 58,07μJ of energy per conversion. The Duty Cycle change is 0.4511% per Celsius in a range of -40°C to 125°C, which is close to the experimental results for three samples, which indicates an average change of 0.454% for the Duty Cycle per Celsius degree in a range of 16°C to 87°C.