Performance of Short Channel Junctionless Cylindrical Surrounding Gate Si- and III-V-Based MOSFETs: A Comparative Study

In this paper, a comparative study is presented between the performance of short channel junctionless cylindrical surrounding gate (SCJCSG) Si- and InGaSb-based MOSFETs in the subthreshold regime with source/drain depletion effect solving 2D Poisson's equation on account of parabolic approximation and symmetry condition. The different figure of merits like central potential, subthreshold current, threshold voltage, subthreshold slope, and drain-induced barrier lowering is estimated by altering the channel materials (Si and InGaSb) of the device and then compared as a function of length, radius, oxide thickness, doping concentration, and metal work-function. The results obtained from the present study demonstrate that the SCJCSG device structure works well for suppressing short-channel effects in the nanoscale regime due to better electrostatic control of the gate over the channel. Further, III-V material-based device shows better results compared to the Si-based device with a view to faster logic operation.